Aerospace and Mechanical Engineering | Article | Published 2024

Local Diagnostics Of Electrophysical Properties In Semiconductor Nanostructures.

Authors:
Collection: Library Progress International
Keywords: Material, structure, diagnostics, concentration profile, energy spectrum, diagram, parameter, local micro- and macro-inhomogeneity, semiconductor structures, deep level relaxation spectroscopy, scanning probe microscopy, capacitance-voltage characteristics, local current relaxation, diagnostics of nanostructures.

Abstract

In today's century, the development of information technology has given impetus to the development of the economy. Impact of the development of semiconductor materials and nanoelectronics technologies on innovative processes in the electronic economy. This research examines the concentration and energy levels of charge carriers in modern conditions for the study of electrophysical tools of semiconductor materials and the application of new diagnostic methods. Semiconductor technologies form the basis of modern electronics and information technologies. These technologies are especially important in creating high-speed telecommunication systems. Semiconductor electronic devices are basically the elementary base of micro- and nanoelectronics. Therefore, research and synthesis of new materials, study of their electrophysical properties, production technology were developed in this field.

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