Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

Raximov Anvar; Sardor Donaev

Physical and Mathematical Sciences | Conference paper | Published 2023

Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

Authors:

Raximov Anvar

Sardor Donaev

Collection: E3S Web of Conferences 383, 04041 (2023), TT21C-2023

Keywords: create materials, implantation, silicon dioxide, penetration depth

Abstract

Abstract. Auger electron spectroscopy combined with ion etching was used to study the effect of ion doping on the distribution profiles of atoms in silicon in contact with its surface. It has been established that preliminary implantation of Ba+ ions with E0=0.5-1 keV leads to a sharp decrease (by a factor of 10-12) in the diffusion length of oxygen and nickel atoms.

References

References 1. U. Ziyamukhamedova, A. Djumabaev, B. Urinov, T. Almatayev, E3S Web of Conf. 264, 05011 (2021) 2. F. Nurkulov, U. Ziyamukhamedova, E. Rakhmatov, J. Nafasov, E3S Web of Conf. 264, 02055 (2021) 3. G. Miradullaeva, E. Rakhmatov, O. Bozorov, U. Ziyamukhamedova, B. Shodiev, Lect. Not. in Civ. Eng. 150, 346–355 (2021) 4. U. Ziyamukhamedova, E. Rakhmatov, J. Nafasov, J. of Phys.: Conf. Ser. 1889(2), 022056 (2021) 5. V.G. Lifshits, Electronic spectroscopy and atomic processes on the surface of silicon (M.: Nauka, 1985) 6. M.T. Normuradov, B.E. Umirzakov, A.S. Rysbaev, Surface 9, 39 (1984) 7. M.T. Normuradov, B.E. Umirzakov, Energy spectra of the surface of solids implanted with low-energy ions (Tashkent: Fan, 1989) 8. N. Lieske, R. Hezei, Thin Sol. Films 85(1), 7 (1981) 9. V.G. Lifshits, V.G. Kotlyar, A.A. Saranin, Surface 12, 76 (1984) 10. K. Hoppe, W.R. Fahrner, D. Fink, S. Dhamodoran, et. al., Nucl. Instr. Meth. B. 266, 1642–1646 (2008) 11. Y. Kanemitsu, T. Kushida, Appl. Phys. Lett. 77(22), 3550-3552 (2000) 12. Z.A. Isakhanov, Z.E. Mukhtarov, B.E. Umirzakov, M.K. Ruzibaeva, Technical Physics 56(4), 546-549 (2011) 13. B.E. Umirzakov, S.B. Donaev, J. of Surface Invest.: X-ray, Synchrotron and Neutron Techn. 11(4), 746-748 (2017) 14. A.S. Rysbaev, Z.B. Khuzhaniyazov, A.M. Rakhimov, I.R. Bekpulatov, Techn. Phys. 59(10), 1526-1530 (2014) 15. A.S. Risbaev, J.B. Khujaniyazov, I.R. Bekpulatov, A.M. Rakhimov, J. of Surface Investig. 11(5), 994-999 (2017) 16. S.B. Donaev, A.K. Tashatov, B.E. Umirzakov, J. of Surface Investig.: X-ray, Synchrotron and Neutron Techn. 9(2), 406-409 (2015) 17. M. Hamasaki, T. Adachi, S. Wakayama, M. Kikuchi, J. Appl. Phys. 47(7), 3987-3992 (1978) 18. S. Takeoka, M. Fujii, S. Hayashi, Phys. Rev. B. 62(24), 16820 – 16825 (2000) 19. Y.S. Ergashov, Tech. Phys. 62(5), 777-780 (2017) 20. B.E. Umirzakov, M.T. Normuradov, D.A. Tashmukhamedova, A.K. Tashatov, Nanomaterials and prospects for their application (Tashkent: MERIYUS, 2008) 21. L.E. Davis, N.C. McDonald, P.W. Palmberg, G.E. Riach, R.Y. Weber (eds), Handbook of Auger Electron Spectroscopy. Physical electronics (Edina, 1976)

Views

Reads

Comments

Reviews

Liked

Shared

Bibliography

Citations

Like and share on

Cite this publication

Copy text below and use in your article